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Local Electronic Structure around a Single Impurity in an Anderson Lattice Model for Topological Kondo Insulators

机译:anderson中单个杂质周围的局部电子结构   拓扑Kondo绝缘子的格子模型

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摘要

Shortly after the discovery of topological band insulators, the topologicalKondo insulators (TKIs) have also been theoretically predicted. The latter hasignited revival interest in the properties of Kondo insulators. Currently, thefeasibility of topological nature in SmB$_6$ has been intensively analyzed byseveral complementary probes. Here by starting with a minimal-orbital Andersonlattice model, we explore the local electronic structure in a Kondo insulator.We show for the first time that the two strong topological regimes sandwichingthe weak topological regime give rise to a single Dirac cone, which is locatednear the center or corner of the surface Brillouin zone. We further find that,when a single impurity is placed on the surface, low-energy resonance statesare induced in the weak scattering limit for the strong TKI regimes and theresonance level moves monotonically across the hybridization gap with thestrength of impurity scattering potential; while low energy states can only beinduced in the unitary scattering limit for the weak TKI regime, where theresonance level moves universally toward the center of the hybridization gap.These impurity induced low-energy quasiparticles will lead to characteristicsignatures in scanning tunneling microscopy/spectroscopy, which has recentlyfound success in probing into exotic properties in heavy fermion systems.
机译:在发现拓扑带状绝缘子之后不久,拓扑Kondo绝缘子(TKI)也已在理论上进行了预测。后者引起了人们对近藤绝缘子性能的复兴兴趣。目前,已通过几种互补探针对SmB $ _6 $中拓扑性质的可行性进行了深入分析。在这里,我们从最小轨道的Andersonlattice模型开始,探索了Kondo绝缘子中的局部电子结构。我们首次展示了将弱拓扑结构夹在中间的两个强拓扑结构产生了一个位于附近的Dirac锥。布里渊区的中心或角落。我们进一步发现,当单一杂质被放置在表面上时,在强TKI体制下,在弱散射极限下会诱导出低能共振状态,并且共振水平随着杂质散射势的强度在杂交间隙中单调移动。低能态只能在弱TKI体制的单一散射极限中诱导,共振水平普遍朝着杂交间隙的中心移动。这些杂质诱导的低能准粒子将导致扫描隧道显微镜/光谱学中的特征特征。最近发现了在重型费米子系统中探索外来特性的成功。

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